Thermoelectricfigure of merit of M-sulphides (M = Fe, Pd, Ti...) thin films
A.Pascual1, J.R. Ares2, I.J. Ferrer1, C.R.Sánchez1
1Dpto. de Física de Materiales, C-IV, UniversidadAutónoma de Madrid, Cantoblanco, 28049-Madrid, España
2Laboratoire de Chimie Metallurgique des Terres Rares,ISCA-CNRS, Rue Henri Dunant 2-8, 94320 Cedex, France
Interest on thethermoelectric materials is increasing due to the strong demand of clean energysources. Furthermore, the optoelectronic communication market contributes tothis increasing demand requiring small size power supplies. In this sense, thinfilm thermoelectric materials are a good alternative versus bulk materials. Wehave grown transition metal (Fe, Co, Pd, Ti...) sulphide thin films (doped andnon-doped) and we have measured the electrical and transport properties duringthe formation of the films. We have performed preliminary measurements on thesethin films to determine the thermoelectric figure of merit, ZT, using theHarman method1. By applying this method, it is not necessary to knowthe thermal conductivity of the film to determine ZT. The thermoelectric figureof merit of non-doped FeS2, CoS2, PdS and TiS2films was measured at different temperatures. Values of ZT were found to below, but it is expected to get higher ZT values by controlling the filmdeposition parameters and doping them. The films were characterised using XRDto identify their crystalline phases. The thermoelectric figure of merit valueswill be reported and discussed.
 H. Iwasaki, M.Koyano, H. Hori, J. Appl. Phys.41, 6606 (2002).