Kinetic properties of p-type Mg2Si1-xSnx solid solutions

M.I. Fedorov, V.K .Zaitsev, I.S. Eremin, E.A. Gurieva, A.T. Burkov, P.P. Konstantinov, M.V. Vedernikov

A.F.Ioffe Physico-technical Institute, Polytekhnicheskaya ul.26, St.Petersburg,194021, Russia

It is well known that the Mg2Si1-xSnx solid solutions of n-type has high thermoelectric figure of merit. In this situation it is very important to study a possibility to create these materials of p-type. Until now there was no publication devoted to manufacturing and study of such a material is known. In this paper the results of the study of influence of cation and anion substitution by other atoms (Na, Cu, Ag, In, Al) on kinetic properties of the material are presented. It is shown that it is possible to produce the Mg2Si1-xSnx solid solutions with x0.6 of p-type with various hole concentration (up to 41019cm-3). Seebeck and Hall coefficients and electrical conductivity were measured in the temperature range 100 500 K. The hole mobility in these solid solutions is lower than that of electrons. Some parameters of valence band are determined.